Phd On Dielectric Material Characterization for
vor 3 Monaten
**About GF**
GlobalFoundries® Inc. (GF®) is one of the world's leading semiconductor manufacturers. GF redefines innovation and semiconductor manufacturing by developing and delivering feature-rich process technology solutions with leading performance in all growth markets. GF offers a unique mix of design, development and manufacturing services. With a talented and diverse team and manufacturing locations in the U.S., Europe and Asia, GF is a trusted technology provider to its global customers. GF employs approximately 13,000 people, including more than 3,000 in Dresden, Germany.
**Phd **on dielectric material characterization for 22FDSOI and NVM technologies**
In a running semiconductor manufacturing many parameters of specific products are finally controlled and monitored in a very detailed and specific manner. Amongst these most important are product performance related. At the same time and somehow in contradiction to the performance requirements is the strict reliability request of a specific product. Key elements in both technologies FDSOI and NVM as well are dielectric materials: the logic gate dielectric including interface to substrate and the oxid / nitrid / oxid stack and the tunneloxide as well. Beside our established inline measurements to control reliability we want to investigate and establish sophisticated methods to control the quality of high-k dielelectric ( HfO )/ultrathin SiO2 interface and ONO/ tunox as well. Most important is to correlate these properties to reliability and performance as well as to manufacturing steps and process parameters. For 22FDSOI a method to characterize interface traps with their energetic position in band gap and spatial position in gate stack had been developed together with TU Bergakademie Freiberg ( multi STS measurement). The goal of this work is to test the method with respect to provoked changes in dielectric properties to estimate the sensitivity of the method and to transfer the measurement procedure from the university lab to G lobalFoundries. A second part of the work is related to test suitable characterization metho d s (conductance and capacitance transient measurements) to establish a method to characterize ONO and tuneloxide properties within an existing technology. For both topics we will work together with TU Bergakademie Freiberg ( Institut für Angewandte Physik ).
**Your Profile**
- You have completed or are finalizing your Master Thesis in Physics at the Technical University Freiberg.
- You have knowledge of solid-state physics, and in the field of semiconductor devices.
- Knowledge of semiconductor technology and semiconductor manufacturing is an advantage.
- A confident handling of office programs for word processing and presentation is required.
- You have a high degree of independence and flexibility in terms of time to communicate with the global teams.
- You are communicative and enjoy working in a team.
- Good written and spoken English skills round off your profile.
We are looking for a research associate who wants to take a coordinating role in a joint project with other partners from academia and in aligning their research work to the requirements of later mass production. You will systematically document and present the results in regular reports. GF supports the publication of scientific results in leading journals and the protection of intellectual property by the submission of patents.
**Start Date**
Immediately, 3 years contract with 40h/week work time.
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