Phd On Development of Next Generation Embedded

vor 7 Monaten

Dresden, Deutschland GLOBALFOUNDRIES Vollzeit

[for german version see below] _

**About GF**

GlobalFoundries® Inc. (GF®) is one of the world's leading semiconductor manufacturers. GF redefines innovation and semiconductor manufacturing by developing and delivering feature-rich process technology solutions with leading performance in all growth markets. GF offers a unique mix of design, development and manufacturing services. With a talented and diverse team and manufacturing locations in the U.S., Europe and Asia, GF is a trusted technology provider to its global customers. GF employs approximately 13,000 people, including more than 3,000 in Dresden, Germany.

**PhD onMRAM): Advanced MTJ Stack Engineering and its Interaction with Novel Patterning Techniques Development of Next Generation Embedded Magnetic Random Access Memory (STT-**

The GlobalFoundries Ph.D. program provides Ph.D. students with a unique opportunity to help shape the integration of embedded non-volatile memories in leading-edge logic semiconductors. In collaboration with global teams, the PhD program will start with an existing STT-MRAM technology embedded into a 22nm FDSOI technology. To capture additional market segments beyond “consumer-grade” eFLASH replacement new MRAM flavors are under development to improve write and read speed as well as power-consumption and reliability. This requires the exploration of innovative MTJ stack solutions and structuring techniques.

The contract for this position is setup for 3 years with a possibility to extend by one additional year, if required. We are looking for a research associate who would like to take a coordinating role in a joint project with other partners from academia and industry as well as in aligning his or her research work to the requirements of later mass production. You will support the team by coordinating the runs of wafers, including experiment planning and execution. Magnetic as well as electrical characterization of the different stack and patterning solutions will be organized and coordinated by you independently. For this purpose, existing infrastructure and expertise will be used. You will systematically document and present the results in regular reports. GF supports the publication of scientific results in leading journals and the protection of intellectual property by the submission of patents.

**Required Qualifications**
- You have completed or are finalizing your Master Thesis electrical engineering, physics or a comparable research and are currently still enrolled as a student (M/F) at a college or university,
- You have extensive knowledge in the field of semiconductor devices and their functionality,
- Ideally you have studied non-volatile memories based on semiconductors using magnetic storage concepts or other resistance modifying memory concept and have some experience with physical vapor deposition or patterning/dry-etching techniques
- profound background in solid state physics and magnetic thin films is a plus
- You know how to use office programs for word processing and presentation,
- You have a high degree of independence and time flexibility for communication with global teams,
- You are communicative and enjoy working in a team,
- A good command of written and spoken English completes your profile.

**Start Date**

Immediately, 3 years contract.
- ______________________________________________________

**Über GF**
GlobalFoundries® Inc. (GF®) ist einer der weltweit führenden Halbleiterhersteller. GF definiert Innovation und Halbleiterfertigung neu, indem es funktionsreiche Prozesstechnologielösungen mit führender Performance in allen Wachstumsmärkten entwickelt und liefert. GF bietet einen einzigartigen Mix aus Design-, Entwicklungs
- und Fertigungsdienstleistungen. Mit einem talentierten und diversen Team und Fertigungsstandorten in den USA, Europa und Asien, ist GF ein zuverlässiger Technologieanbieter für seine weltweiten Kunden. GF beschäftigt rund 13.000 Mitarbeitende, davon mehr als 3.000 in Dresden.

**Promotion über Magnetische Speicherlösungen (STT-MRAM) der nächsten Generation: Entwicklung innovativer, nicht-destruktiver MTJ Charakterisierungen für die inline Prozesskontrolle von integrierten Prozesswafern**

Das GlobalFoundries Ph.D. Programm eröffnet Doktoranden die einmalige Möglichkeit, die Integration von eingebetteten nichtflüchtigen Speichern in leading-edge Logik-Halbleitern mitzugestalten. In Zusammenarbeit mit global angesiedelten Teams setzt die Arbeit auf einer bereits existierenden, eingebetteten STT-MRAM-Technologie in der 22nm FDSOI Technologie auf. Ziel ist die Entwicklung und Optimierung von Messtechniken für die Charakterisierung von MTJ-Stapelparametern, u.a., durch die Implementierung fortschrittlicher Techniken wie Current-in-Plane Tunneling (CIPT), photo-magneto-optischer Kerr-Effekt (pMOKE) und ferromagnetische Resonanz (FMR) auf vollständig prozessierten Wafern zur zeitnahen Inlineprozesskontrolle. Die Extraktion kritischer MTJ-relevanter P

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