(Lead) Principal SiC-Prozessintegrationsspezialist
vor 4 Monaten
Was Sie erwartet:
Prozessentwicklung & -transfer: Leitung der Prozessentwicklung und des Transfers zur Einführung und Skalierung neuer SiC-Leistungstechnologien. Prozessqualifizierung: Entwicklung und Qualifizierung neuer und abgeleiteter Prozesse für SiC-Leistungsbauelemente. Prozessparameter: Identifikation und Überwachung wichtiger Prozessparameter sowie Korrelierung von Geräte- und Prozessmerkmalen für SiC-MOSFETs und Dioden. Projektleitung & Teamführung: Leitung von Projekten und interdisziplinären Teams zur Optimierung der Prozessintegration, Bewertung und Definition der besten Methoden (BKM), Festlegung der Prozessspezifikationen zur Erfüllung der Geräteanforderungen. Datenanalyse: Nutzung umfangreicher Datenanalysen aus Parametertests von Wafern, Prozesskontrollstrukturen und Inline-Prozesskontrollen zur Korrelierung von Prozess- und Gerätekennwerten in Zusammenarbeit mit dem Designteam. Fehlerbehebung & kontinuierliche Verbesserung: Identifikation von Ursachen und Definition nachhaltiger Korrekturmaßnahmen bei Prozessabweichungen oder Zuverlässigkeitsproblemen, sowie Durchführung kontinuierlicher Verbesserungsprojekte zur Steigerung der Stabilität, Ausbeute, Zuverlässigkeit und Produktionskosten bestehender Technologien. Technologieeinführung: Untersuchung und Einführung neuer SiC-Prozesse, Prozessmodule und Technologie-Roadmaps zur Unterstützung neuer Geräteherstellungsplattformen, Bewertung von SiC-Fertigungsausrüstungen, Materialien, Experimenten und Methoden. Schnittstellenmanagement: Funktion als Schnittstelle für alle prozessbezogenen Themen zwischen Produktion, Qualitätsabteilung, Technologie-/Produktentwicklung und Backend. Forschung & Kooperation: Zusammenarbeit mit internen und externen Forschungseinrichtungen zur Einführung und Optimierung neuer SiC-Prozesse.
Was Sie mitbringen:
Akademische Qualifikation: Erfolgreich abgeschlossenes Master- oder Promotionsstudium in Elektrotechnik, Physik, Chemie, Halbleitertechnik, Mikrosystemtechnik oder einem ähnlichen Fachgebiet. Berufserfahrung: Über 10 Jahre Erfahrung in der SiC-Prozessierung, vorzugsweise in der SiC-Wafer-Fertigung. Fachkenntnisse: Tiefgehendes Wissen in der Halbleitergerätephysik und Prozessintegration; insbesondere umfassende Kenntnisse von SiC-Leistungsbauelementen, insbesondere MOSFETs und Dioden. Technische Problemlösung: Technische Problemlösungsansätze sowie Anwendung von Methoden und Werkzeugen zur Bewertung und Datenverarbeitung. Experimentelle Fähigkeiten: Fähigkeit, Prozessversuche sorgfältig zu entwerfen, durchzuführen und zu analysieren; nachgewiesene Erfahrung in der Leitung erfolgreicher Projekte. Kommunikationsfähigkeiten: Ausgezeichnete Kommunikations- und Präsentationsfähigkeiten in Englisch. Deutsch und/oder Chinesisch sind von Vorteil. Arbeitsweise: Strategisches Denken, gut organisiert und selbstständige Arbeitsweise. Teamarbeit: Effektiver Teamplayer mit starken Führungskompetenzen in einem multikulturellen Umfeld. Motivation: Can-do-Mentalität und Bereitschaft, die Komfortzone zu verlassen, um zusätzliche Anstrengungen zu leisten. Reisebereitschaft: Offen für internationale Geschäftsreisen oder Delegationen.
Was wir können:
Flexible Arbeitszeiten Eigenverantwortliches Arbeiten Konzernweites "Netzwerken" Attraktive Vergütung Teamorientierte Arbeitsweise Flexible Arbeitszeiten Eigenverantwortliches Arbeiten Konzernweites "Netzwerken" Attraktive Vergütung Teamorientierte Arbeitsweise
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