GaN Process Development Engineer

vor 1 Tag


Dresden, Sachsen, Deutschland X-FAB Semiconductor Foundries Vollzeit
Your Role:

We are seeking a highly skilled GaN Process Development Engineer to join our team at X-FAB Semiconductor Foundries. As a key member of our development team, you will be responsible for the development of GaN / Wide Band Gap semiconductor devices and processes.

Your Responsibilities:
  • Define semiconductor process flows and device architectures.
  • TCAD simulation of devices and processes.
  • Definition, implementation and evaluation of experiments using Design of Experiments (DoE) methodology.
  • Development and design of test structures.
  • Electrical characterization of GaN / Wide Band Gap devices.
  • Process integration and cooperation with other departments within X-FAB.
  • Offer technical support to customers.
  • Cooperation with external partners.
  • Management of development projects, working in interdisciplinary and international teams.
Your Profile:

We are looking for a highly motivated and experienced professional with a Master's degree in the field of electrical engineering, microelectronics or related fields. A minimum of 3 years of experience in development, functionality, manufacturing, characterization and application of GaN / Wide Band Gap semiconductor devices is required. Experience with GaN / Wide Band Gap wafer processes and project management experience are highly desirable.

We offer a dynamic and multicultural work environment with a strong focus on teamwork and collaboration. If you are interested in the development of modern semiconductor devices with the highest quality standards, we encourage you to apply for this exciting opportunity.



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