GaN Semiconductor Device Developer

vor 1 Tag


Dresden, Sachsen, Deutschland X-FAB Semiconductor Foundries Vollzeit
About the Role:

We are seeking a highly skilled GaN Process Development Engineer to join our team at X-FAB Semiconductor Foundries. As a key member of our development team, you will be responsible for the development of GaN / Wide Band Gap semiconductor devices and processes.

Key Responsibilities:
  • Develop and implement GaN / Wide Band Gap semiconductor process flows and device architectures.
  • Conduct TCAD simulations of devices and processes to optimize performance and efficiency.
  • Design and implement experiments using Design of Experiments (DoE) methodology to evaluate process and device performance.
  • Develop and design test structures to characterize GaN / Wide Band Gap devices.
  • Perform electrical characterization of GaN / Wide Band Gap devices to ensure compliance with quality standards.
  • Collaborate with cross-functional teams to integrate GaN / Wide Band Gap processes into our manufacturing operations.
  • Provide technical support to customers and external partners to ensure successful adoption of our GaN / Wide Band Gap technologies.
  • Manage development projects and lead international teams to deliver high-quality results.
Requirements:
  • Master's degree in electrical engineering, microelectronics, or a related field.
  • Minimum 3 years of experience in GaN / Wide Band Gap semiconductor device development, manufacturing, characterization, and application.
  • Experience with GaN / Wide Band Gap wafer processes and TCAD simulations.
  • Desirable experience in the automotive industry and project management.
  • Strong communication skills and ability to work in a multicultural environment.


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