Research Associate
vor 1 Monat
The Fraunhofer Institute for Silicon Technology ISIT offers a future-oriented research and production environment for a total of about 190 employees and several site partners in Itzehoe with a technology-oriented equipment park, two 8" clean rooms and approximately 700 m² of laboratory space. As an enabler between research and development on the one hand and commercial application on the other, Fraunhofer ISIT is an exciting employer with innovative prospects.
Our »Power Electronics« business area focuses on the development of gallium nitride-based processes and devices. This includes lateral AlGaN/GaN HEMTs, vertical GaN MOSFETs and diodes, as well as GaN-based MEMS, sensors and microelectronic devices, and the development and adaptation of processes for the reliable production of these.
What you will do
- In this key role, you will coordinate national and international project teams while also communicating and representing customer requirements to internal stakeholders.
- While doing so, you will independently work on work packages within forward-looking research projects with various internal and external actors from industry and research.
- Specifically, you will coordinate project activities in our post-CMOS clean room and acquire industrial and public R&D projects.
- You will focus on the development of new devices for power and microelectronics - within your projects, you will be responsible for the development of innovative concepts and the coordination of the individual processes and metrological tasks required for integration.
- You will document and communicate the results internally and to customers and capitalize on the results in publications and patents.
What you bring to the table
- Completed scientific university degree (Master's/Diploma/Doctorate) in physics, electrical engineering, materials science, or a comparable disciplines
- Knowledge of semiconductor manufacturing technologies and processes, preferably GaN-specific
- Experience in project management
- Advantagous: Expertise in the characterization of semiconductor processes and devices, device development and process and device simulation (TCAD)
- Proficiency in written and spoken English and German
- A high degree of independence, initiative and commitment
- The ability to quickly familiarize yourself with new challenges and to thrive while taking on responsibility in a team environment
What you can expect
- Flexible working hours and support in balancing private and professional life
- 30 days of vacation per year , as well as time off on bridge days and between Christmas and New Year
- Occupational health management and company pension scheme (VBL)
- Corporate Benefits
- Subsidy for the Deutschlandjobticket
- Free employee parking
- Internal and external training opportunities
- Space for independent work and active participation in shaping the future through your ideas
- Direct communication and flat hierarchies for a smooth workflow
The weekly working time is 39 hours. This position is also available on a part-time basis. The position is initially limited to 2 years. However, we are interested in long-term cooperation.
We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons are given preference in the event of equal suitability. Appointment, remuneration and social security benefits based on the public-sector collective wage agreement (TVöD).
With its focus on developing key technologies that are vital for the future and enabling the commercial utilization of this work by business and industry, Fraunhofer plays a central role in the innovation process. As a pioneer and catalyst for groundbreaking developments and scientific excellence, Fraunhofer helps shape society now and in the future.
Interested? Apply online now. We look forward to getting to know you
Fraunhofer Institute for Silicon Technology ISIT
Requisition Number: 76180
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