Research Associate
vor 1 Monat
We are seeking a highly skilled Research Associate to join our team at the Fraunhofer Institute for Silicon Technology ISIT. As a Research Associate, you will be responsible for the characterization of GaN-based devices at wafer level and in packages, as well as the development and establishment of new measuring techniques for the characterization of GaN devices.
Key Responsibilities- Static and dynamic electrical characterization of GaN-based devices at wafer level and in packages
- Development and establishment of new measuring techniques for the characterization of GaN devices
- Development, design, and application of test structures and measurement specifications for the in-line characterization of novel devices during production
- Supplementary material science characterization of devices during and after production
- Application of compact models to evaluate and model component properties
- Supervision of students during electrical and materials science characterization
- Completed scientific university degree in physics, electrical engineering, materials science, or a comparable discipline
- Knowledge of semiconductor manufacturing technologies and processes, preferably GaN-specific
- Experience in the characterization of semiconductor processes and devices
- Knowledge of modeling electrical circuits as well as device modeling using SPICE
- Flexible working hours and support in balancing private and professional life
- 30 days of vacation per year as well as time off on bridge days and between Christmas and New Year
- Occupational health management and company pension scheme (VBL)
- Corporate Benefits
- Subsidy for the Deutschlandjobticket
- Free employee parking
- Internal and external training opportunities
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Itzehoe, Deutschland Fraunhofer-Gesellschaft VollzeitJob Title: Research AssociateJob Summary:We are seeking a highly skilled Research Associate to join our team at the Fraunhofer Institute for Silicon Technology ISIT. As a Research Associate, you will be responsible for the electrical characterization of GaN-based devices, including static and dynamic characterization at wafer level and in packages. You will...
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Itzehoe, Deutschland Fraunhofer-Gesellschaft VollzeitJob DescriptionWe are seeking a highly skilled Research Associate to join our team at the Fraunhofer Institute for Silicon Technology ISIT. As a Research Associate, you will play a key role in the development of gallium nitride-based processes and devices.ResponsibilitiesDesign and development of parameterizable GaN-based devices using commercial and...
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Itzehoe, Deutschland Fraunhofer-Institut für Siliziumtechnologie ISIT VollzeitThe Fraunhofer Society currently operates 76 institutes and research units throughout Germany and is a leading applied research organization. Around 32 000 employees work with an annual research budget of 3.4 billion euros. The Fraunhofer Institute for Silicon Technology ISIT offers a future-oriented research and production environment in Itzehoe with a...
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Itzehoe, Deutschland Fraunhofer-Institut für Siliziumtechnologie ISIT VollzeitThe Fraunhofer Society currently operates 76 institutes and research units throughout Germany and is a leading applied research organization. Around 32 000 employees work with an annual research budget of 3.4 billion euros. The Fraunhofer Institute for Silicon Technology ISIT offers a future-oriented research and production environment in Itzehoe with a...
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Itzehoe, Deutschland Fraunhofer-Gesellschaft VollzeitJob DescriptionAt Fraunhofer-Gesellschaft, we are seeking a highly skilled Research Associate to join our team in the field of semiconductor technology. As a key member of our research group, you will be responsible for conceiving, simulating, and designing novel devices that utilize ferroelectric thin films.Key Responsibilities:Conception and simulation of...