GaN Epitaxy Process Development Engineer
vor 3 Wochen
About this role
Nexperia is seeking a skilled GaN Epitaxy Process Development Engineer to contribute to the development and production of 200mm GaN-on-Si Epi wafers.
Key responsibilities
- Develop and improve epitaxy processes for GaN-on-Si wafers
- Collaborate with the GaN Epitaxy team to achieve process development and production goals
- Interface with the fabrication department to ensure smooth operations and training
- Prepare and maintain documentation for process releases and tool setup
- Conduct non-standard process and characterization experiments for R&D purposes
Requirements
- Bachelor's or Master's degree in physics, materials science, electrical engineering, or a related field
- Minimum 3 years of relevant experience, depending on educational credentials
- Basic understanding of semiconductor devices, epitaxial processes, and related characterization techniques
- Experience in a cleanroom environment, especially in semiconductor production, is a plus
- Strong team player with a drive to achieve success
- Fluent in German and English
- Good communication skills, both verbal and written
What we offer
- Flexible working hours and possibility of overtime reduction for a better work-life balance
- Unlimited employment contract with a competitive salary and supplementary voluntary employee benefits
- A wide range of training courses and career development options
- Various benefits, including retirement provisions, travel allowance, bike leasing, company events, sports and leisure activities, employee discounts, and more
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