Research Scientist

vor 2 Wochen


Itzehoe, Deutschland Fraunhofer-Gesellschaft Vollzeit

About the Job

We are seeking a highly skilled Research Scientist to join our team at the Fraunhofer Institute for Silicon Technology ISIT. As a Research Scientist, you will be responsible for designing and developing gallium nitride-based devices using commercial and open-source EDA software.

Key Responsibilities

  • Design and development of GaN-based devices
  • Adaptation and development of a GaN PDK
  • Alignment mark strategy and mask design
  • Development and design of test structures and measurement specifications
  • Simulation and calibration of processes and device properties
  • Supervision of students during the design and simulation of building elements
  • Independent processing of work packages within forward-looking research projects

Requirements

  • Completed scientific university degree in physics, electrical engineering, materials science, or a comparable discipline
  • Knowledge of semiconductor manufacturing technologies and processes, preferably GaN-specific
  • Knowledge of device development and process and device simulation (TCAD)
  • Proficiency in written and spoken English and German
  • A high degree of independence, initiative, and commitment

What We Offer

  • Flexible working hours and support in balancing private and professional life
  • 30 days of vacation per year
  • Occupational health management and company pension scheme
  • Corporate Benefits
  • Subsidy for the Deutschlandjobticket
  • Free employee parking
  • Internal and external training opportunities

This position is initially limited to 2 years, but we are interested in long-term cooperation. We value and promote the diversity of our employees' skills and welcome all applications.


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