SiC Process Integration Expert

vor 3 Wochen

Munich, Bayern, Deutschland Bertrandt Vollzeit
Job Description

We are seeking a highly skilled SiC Process Integration Expert to join our team at Bertrandt. As a key member of our team, you will be responsible for leading the development and transfer of new SiC power technologies, as well as qualifying new and derivative processes for SiC discrete power technologies.

Key Responsibilities:
  • Process Development & Transfer: Develop and transfer new SiC power technologies to startup and ramp-up.
  • Process Qualification: Qualify new and derivative processes for SiC discrete power technologies.
  • Process Parameters: Identify and monitor key process parameters, and correlate device to process characteristics for SiC MOSFETs and diodes.
  • Project & Team Leadership: Lead projects and cross-functional teams to optimize process integration, evaluate and define best-known-methods (BKM), and determine process specifications to meet required device specifications.
  • Data Analysis: Utilize extensive data analysis from wafer parametric testing, process control monitoring structures, and in-line process control to correlate process and device characteristics, in cooperation with the design team.
  • Problem Solving & Continuous Improvement: Identify root causes and define sustainable corrective actions in case of process deviations or reliability failures, while driving continuous improvement projects to enhance stability, yield, reliability, and production costs of existing technologies.
  • Technology Introduction: Investigate and introduce new SiC processes, process modules, and technology roadmaps to support new device manufacturing platforms, while evaluating SiC manufacturing equipment, materials, experiments, and methods.
  • Interface Management: Act as the interface for all process-related topics between production, quality department, technology/product development, and backend.
  • Research Collaboration: Collaborate with internal and external research institutions for the introduction and optimization of new SiC processes.
Requirements:
  • Academic Qualification: Master's degree or PhD in Electrical Engineering, Physics, Chemistry, Semiconductor Technology, Microsystems Technology, or a similar discipline.
  • Experience: Over 10 years of experience in SiC processing, preferably in SiC wafer fab.
  • Expertise: In-depth working knowledge of semiconductor device physics and process integration; especially deep knowledge of SiC power devices, particularly MOSFETs and diodes.
  • Problem-Solving Skills: Proficient in technical problem-solving approaches and use of methods and tools for evaluation and data processing.
  • Experimental Skills: Ability to design, carry out, and analyze process experiments meticulously; proven track record in leading successful projects.
  • Communication Skills: Excellent communication and presentation skills in English. Additional proficiency in German and/or Chinese is a plus.
  • Working Style: Strategic thinker with a well-organized and independent working style.
  • Teamwork: Effective team player with strong leadership qualities in a multicultural environment.
  • Motivation: Proactive mindset and willingness to step out of the comfort zone to achieve extra milestones.
  • Travel Readiness: Open to international business trips or delegations.

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