Development Engineer GaN Epitaxy

vor 2 Wochen


Reutlingen, Baden-Württemberg, Deutschland Robert Bosch GmbH Vollzeit
Development Engineer GaN Epitaxy (f/m/div.) (Salary: ~84.000 EUR p.a.*)"

Tübinger Straße 123, 72770 Reutlingen, Germany

Full-time

Robert Bosch GmbH

Company Description

At Bosch, we shape the future by inventing high-quality technologies and services that spark enthusiasm and enrich people's lives. Our promise to our associates is rock-solid: We grow together, we enjoy our work, and we inspire each other. Welcome to Bosch.

The Robert Bosch GmbH is looking forward to your application

Job Description
  • As a development engineer, you drive and control innovative technology developments for complex products in the area of wide-band gap materials (SiC and GaN) with focus on GaN.
  • In particular your field of action includes the process MOCVD epitaxy for GaN, but also additional processes in the area of GaN technology.
  • You are responsible for the unit process development from an early state until series production, build the necessary process and system knowledge and ensure a successful and efficient transfer to high volume manufacturing.
  • You plan and execute experiments autonomously, coordinate the necessary analyses and evaluate the results in close cooperation with the team.
  • Together with other experts from development and manufacturing, you optimize process modules that are based on your unit process, including the necessary pre- and post-treatment.
  • You apply new processes and materials and carry out technical as well as an economic feasibility assessments of new processes.
  • Last but not least, you are responsible for the cooperation with research institutions for development and the management of quality assessments and process releases.
Qualifications
  • Education: completed university studies in physics, mechanical engineering, materials science, engineering or natural sciences or a comparable field of study.
  • Experience and Knowledge: several years of professional experience in the development of innovative semiconductor technology, ideally in the field of GaN epitaxy; very good knowledge of semiconductor technology including relevant analytical methods; excellent understanding of physical fundamentals
  • Personality and Working Practice: you act in a solution-oriented manner and are extremely enthusiastic, which enables you to tackle even complex challenges with commitment; your initiative and creativity enable you to develop and implement innovative approaches to solutions; you also see yourself as a team player who works effectively with others; your openness enables you to adapt quickly to new situations.
  • Languages: very good knowledge of German and English, both written and spoken

*In accordance with our regulations, the gross annual salary for this position is at least EUR for a 35h week (for a full year of employment and fulfillment of the eligibility requirements based on collective agreements) in the case of a comprehensive execution of job requirements. In addition, there is an individual, performance-related pay, a bonus based on the company's success, as well as employer benefits for the Bosch pension plan. We will be happy to discuss further details of our remuneration package, as well as (remuneration) development opportunities, with you during the application process.

Additional Information

We offer flexible working models: from various part-time options to mobile working and job sharing. Feel free to contact us.

Diversity and inclusion are not just trends for us but are firmly anchored in our corporate culture. Therefore, we welcome all applications, regardless of gender, age, disability, religion, ethnic origin or sexual identity.

Need support during your application?
Verena Breuninger (Human Resources)

Need further information about the job?
Christian Bierhoff (Functional Department)

Still unsure which job really suits you? Then register for Bosch Insights.

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